High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric
| Autor: | Chun-Che Lou, Ming-Jui Yang, Yi-Hsien Lu, Chao-Hsin Chien, Guang-Li Luo, Su-Ching Chiu, Tiao-Yuan Huang |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Gate dielectric Electrical engineering chemistry.chemical_element Dielectric engineering.material Electronic Optical and Magnetic Materials Hafnium Threshold voltage Polycrystalline silicon chemistry Thin-film transistor Gate oxide engineering Optoelectronics Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 28:902-904 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.904901 |
| Popis: | In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiOx) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx gate dielectric exhibit excellent device performance in terms of higher ION/IOFF current ratio, lower subthreshold swing, and lower threshold voltage (Vth) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric. |
| Databáze: | OpenAIRE |
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