Photon-induced transport of impurities in semiconductors

Autor:	A.I. Agafonov
Rok vydání:	1993
Předmět:	Materials science Photon Hydrogen Silicon Phonon business.industry chemistry.chemical_element Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials Ion Semiconductor chemistry Impurity Electrical and Electronic Engineering Atomic physics business
Zdroj:	Physica B: Condensed Matter. 191:355-361
ISSN:	0921-4526
DOI:	10.1016/0921-4526(93)90096-o
Popis:	A theory of photon-induced transport of impurity ions in semiconductors is proposed. Our considerations is based on the photon-induced over-the-barrier transition of the bound ion from the ground localized state into its Bloch states in the host lattice. Migration of photoexcited ions in the continuous-states band is studied including its interaction with the host-lattice phonons. Expressions for both photon-induced ionic diffusion and conductivity are obtained in the quasi-classical approximation. Estimations of the predicted transport with the isotropic-effect analysis are made for interstitial hydrogen ions H + in p-type silicon at low temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76ea10a1eb4a214d5d7d466f3a0e0e0e https://doi.org/10.1016/0921-4526(93)90096-o Zobrazit plný text záznamu