Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Autor:	H. L. Henry Wu, S. W. Ricky Lee
Rok vydání:	2011
Předmět:	Materials science chemistry Electrode Inorganic chemistry Copper plating Exchange current density chemistry.chemical_element Electrolyte Chronoamperometry Electroplating Electrochemistry Copper
Zdroj:	2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
Popis:	Copper electrodeposition in acidic cupric methanesulfonate electrolyte with organic additives was discussed in this study. The influence of the additives in acidic cupric methanesulfonate bath was studied by means of electrochemical measurement using a rotary electrode and actual TSV copper depositions. The electrochemical parameters including exchange current density and cathodic transfer coefficient of base cupric methanesulfonate electrolyte were successfully determined. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76e59607e7602421f2660aa964fa4db5 https://doi.org/10.1109/impact.2011.6117173 Zobrazit plný text záznamu