Mechanism of the formation and evolution of periodic surface relief nanostructures under the scanning laser-induced inelastic photodeformation of semiconductors
| Autor: | S. V. Vintsents, G. S. Plotnikov, Vladimir I Emel'yanov |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Nanostructure Condensed matter physics Surface relief business.industry technology industry and agriculture Nanotechnology Laser Instability Crystallographic defect Surfaces Coatings and Films law.invention Condensed Matter::Materials Science Semiconductor law Melting point Thin film business |
| Zdroj: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:667-673 |
| ISSN: | 1819-7094 1027-4510 |
| DOI: | 10.1134/s1027451007060080 |
| Popis: | A defect-deformational (DD) mechanism is proposed for the self-organization of laser-induced point defects (vacancies and interstitials) under low-threshold (far from the melting point) local (10–100 μm) light-induced heating with the scanning periodic pulsed laser irradiation of a semiconductor resulting in an inelastic deformation of micron-sized regions of Ge. A linear theory of DD instability is developed within the model of a biaxially stressed defective film. This model describes the main experimental data on the formation of two-and one-dimensional periodic nanostructures on a semiconductor surface relief. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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