Structure determination of the indium induced Si(001)-(4 × 3) reconstruction by surface X-ray diffraction and scanning tunneling microscopy
| Autor: | M. Nielsen, R. Feidenhans'l, Robert L. Johnson, E. Landemark, J. H. Zeysing, Oliver Bunk, L. Seehofer, Gerald Falkenberg |
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| Rok vydání: | 1998 |
| Předmět: |
Diffraction
Silicon Chemistry General Physics and Astronomy Synchrotron radiation chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films law.invention Crystallography law X-ray crystallography Patterson function Scanning tunneling microscope Indium Surface reconstruction |
| Zdroj: | Applied Surface Science. :104-110 |
| ISSN: | 0169-4332 |
| Popis: | The indium-induced Si(001)-(4 × 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. ‘Trimers’ made up of In Si In atoms are a key structural element. |
| Databáze: | OpenAIRE |
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