| Autor: |
Gengchiau Liang, Dian Lei, Wei Wang, Wan Khai Loke, Soon Fatt Yoon, Xiao Gong, Shuh Ying Lee, Yuan Dong, Yee-Chia Yeo |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm.2015.7409802 |
| Popis: |
We report the first demonstration of a Ge0.9Sn0.1 multiple quantum wells on Si avalanche photodiode (Ge0.9Sn0.1 MQW/Si APD), achieving a cutoff wavelength λ above 2 μm. This is a major milestone as APDs with cutoff wavelength above 2 μm is traditionally achieved using III-V materials. The peak avalanche gain of the APD is observed to be dependent on incident light power Pin and wavelength λ. A high optical responsivity of 0.33 A/W is achieved at λ = 2003 nm due to the internal avalanche multiplication. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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