Atomic force microscopy study of the degradation mechanism of ultrathin HfO2 layers on silicon during vacuum annealing

Autor:	N. Yu. Lyubovin, Andrey S. Baturin, Yu. Yu. Lebedinskii, V. N. Nevolin, Andrei Zenkevich, E. P. Sheshin
Rok vydání:	2007
Předmět:	Kelvin probe force microscope Materials science Spreading resistance profiling Silicon business.industry Gate dielectric Analytical chemistry chemistry.chemical_element Dielectric Surfaces Coatings and Films Hafnium chemistry Optoelectronics Degradation (geology) Thin film business
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:84-89
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s102745100701017x
Popis:	A complex approach to study the initial stage of degradation of hafnium oxide dielectric films during vacuum thermal annealing up to T = 900°C is proposed. Spreading resistance, Kelvin probe, and force modulation methods are used in addition to surface topography measurements. It is found that degradation processes of ultrathin hafnium oxide layers in contact with silicon during vacuum annealing are characterized by strong spatial inhomogeneity, and it is demonstrated that some areas can be localized at different stages of this process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76b362c3541202bc68a71651eb9a858f https://doi.org/10.1134/s102745100701017x Zobrazit plný text záznamu Full text from SpringerLink