Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology
| Autor: | Z. Fang, Damien Lenoble, M Juhel, Y Rault, Jay T. Scheuer, J.-P Reynard, F. Lallement, Steven R. Walther, Ludovic Godet, A. Grouillet |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Doping Transistor Nanotechnology Surfaces and Interfaces General Chemistry Semiconductor device Condensed Matter Physics Surfaces Coatings and Films law.invention Ion implantation CMOS law Materials Chemistry Optoelectronics Wafer business NMOS logic Sheet resistance |
| Zdroj: | Surface and Coatings Technology. 186:17-20 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2004.04.004 |
| Popis: | As semiconductor devices keep shrinking in size, the fabrication of ultra-shallow junctions (USJ) is becoming a key issue for future CMOS technologies. In this study, we propose for the first time to demonstrate and extensively characterize the capability of plasma doping (PLAD) for fabricating n-type USJ. P-type silicon wafers were used and doped by plasma using AsH 3 /Xe or AsF 5 as precursors. We have performed a Design Of Experiment (DOE) study with AsF 5 implants to model the junction characteristics (junction depth X j , sheet resistance R s ). Through a direct comparison with standard As + ultra-low energy implants, AsF 5 and AsH 3 plasma-doped wafers show a significant improvement of the junctions characteristics. By optimizing each process parameter, we clearly demonstrate the ability of PLAD to fabricate, with a conventional annealing method, the N + /P ultra-shallow junctions required for the NMOS transistors of the future 65 nm CMOS technology. |
| Databáze: | OpenAIRE |
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