P-14: Transient Response Properties of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Autor:	Chengyuan Dong, Haiting Xie, Lei Zhang, Xianyu Tong, Yan Zhou, Guochao Liu
Rok vydání:	2018
Předmět:	Materials science business.industry Thin-film transistor Optoelectronics Nitrogen doped Transient response business Bias stress Amorphous solid
Zdroj:	SID Symposium Digest of Technical Papers. 49:1231-1234
ISSN:	0097-966X
DOI:	10.1002/sdtp.12132
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76a53c9dffde1c54ced0809e80dcb267 https://doi.org/10.1002/sdtp.12132 Zobrazit plný text záznamu Plný text