A Self-Assembled Double-Island Buffer Structure for Improving GaN-Based Materials Grown on Si Substrates
| Autor: | Jen-Inn Chyi, Chen-Zi Liao, Nien-Tze Yeh, Geng-Yen Lee, Hsueh-Hsing Liu, Lung-Chieh Cheng |
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| Rok vydání: | 2014 |
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| Zdroj: | ECS Journal of Solid State Science and Technology. 3:R229-R233 |
| ISSN: | 2162-8777 2162-8769 |
| Popis: | This paper reports a new method to reduce threading dislocation density in GaN epilayers grown on (111) Si substrates by metalorganic chemical vapor deposition. This method utilizes an insitu SiNx mask to produce a self-assembled double-island structure, which effectively reduces threading dislocation density from 9.6 × 109 cm−2 to 2.6 × 109 cm−2 without using any lithographic and regrowth processes. InGaN light-emitting diodes fabricated on the double-island buffer layer exhibit nearly 20% improvement on the optical output power as well as less energy localization effect, compared to those without the double-island buffer layer. The mechanisms of double-island formation as well as dislocation reduction are proposed based on transmission electron microscopy investigations. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0051412jss] All rights reserved. |
| Databáze: | OpenAIRE |
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