Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

Autor:	Ivo Vávra, Š. Beňačka, Marianna Španková, Louis Hellemans, D. Machajdík, Š. Gaži, Stefan Chromik, Karol Fröhlich
Rok vydání:	2000
Předmět:	Materials science Thin layers Annealing (metallurgy) Mineralogy Condensed Matter Physics Epitaxy Mosaicity Inorganic Chemistry Sputtering Materials Chemistry Surface roughness Sapphire Thin film Composite material
Zdroj:	Journal of Crystal Growth. 218:287-293
ISSN:	0022-0248
Popis:	The microstructure of (0 0 1)-oriented epitaxial CeO2 thin layers grown on R-plane sapphire (Al2O3) by off-axis RF sputtering was investigated. The crystalline perfection of CeO2 layers was characterized by Bragg–Brentano X-ray spectra, rocking curves (ω-scan) and TEM. The surface morphology was controlled by AFM. The as-deposited layers display small size mosaicity (∼20 nm), arcing 6–7°, and surface roughness ≈4 nm. Our results show that the degree of epitaxy can be increased by post-deposition annealing (grain size ∼50 nm, arcing 4–5° and surface roughness ≈0.6 nm). Microwave properties of YBCO films deposited on the as-deposited and annealed CeO2 buffer layers are also mentioned.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7693f7b263693626a7167c85646b3ae4 https://doi.org/10.1016/s0022-0248(00)00585-6 Zobrazit plný text záznamu Full Text from ScienceDirect