Shallow junction formation by phosphorus diffusion from in situ spike-doped chemical vapor deposited amorphous silicon
| Autor: | J. Schlote, Ch. Quick, R. Kurps, W. Ropke, D. Krüger |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Amorphous silicon
Materials science Dopant Silicon Doping Analytical chemistry Mineralogy chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound chemistry Electrical and Electronic Engineering Diffusion (business) p–n junction |
| Zdroj: | Microelectronic Engineering. 26:119-129 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)00166-r |
| Popis: | Shallow and lateral homogeneous delineated n + p-junctions were formed by utilizing solid source diffusion from a deposited amorphous silicon layer with an in situ imbedded P rich zone. After heat treatment the layer remains flat, surface roughness has found to be less than 3nm. Dopant pile up at the Si-layer/Si-substrate interface has been observed and interpreted based on segregation phenomena. From the time dependence the P segregation pile up has found to be diffusion limited except of a small starting period. The dopant concentration in the Si-substrate drops down over more than 2 orders of magnitude in a thickness range less than 20 nm. |
| Databáze: | OpenAIRE |
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