Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor
| Autor: | Takuma Doi, Shigeaki Zaima, Osamu Nakatsuka, Shigeo Yasuhara, Yong Jin, Hiroshi Kokubun, Wakana Takeuchi |
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| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Materials science genetic structures Physics and Astronomy (miscellaneous) General Physics and Astronomy 02 engineering and technology Substrate (electronics) Chemical vapor deposition 01 natural sciences chemistry.chemical_compound Crystallinity stomatognathic system 0103 physical sciences Thin film Vinylsilane Chemical composition 010302 applied physics General Engineering 021001 nanoscience & nanotechnology eye diseases Volumetric flow rate chemistry Chemical bond Chemical engineering sense organs 0210 nano-technology |
| Zdroj: | Japanese Journal of Applied Physics. 57:01AE08 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.57.01ae08 |
| Popis: | We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C. |
| Databáze: | OpenAIRE |
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