High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

Autor:	P. H. Tan, K. J. Hubbard, C.A. Billman, S. Völk, Darrell G. Schlom, R.R.M. Held, J. Lettieri, J. H. Haeni
Rok vydání:	2005
Předmět:	Materials science Silicon chemistry business.industry Gate oxide Gate dielectric Optoelectronics chemistry.chemical_element Chemical stability business High-κ dielectric Hot-carrier injection
Zdroj:	Thin Films and Heterostructures for Oxide Electronics ISBN: 9780387258027
DOI:	10.1007/0-387-26089-7_2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::767447060cdfb9ab373971eafc86bb70 https://doi.org/10.1007/0-387-26089-7_2 Zobrazit plný text záznamu