| Autor: |
G.D. Pettit, P. J. Dean, M.R. Lorenz, R. J. Chicotka |
| Rok vydání: |
1970 |
| Předmět: |
|
| Zdroj: |
Solid State Communications. 8:693-697 |
| ISSN: |
0038-1098 |
| DOI: |
10.1016/0038-1098(70)90197-3 |
| Popis: |
The fundamental absorption edge of AlAs and AlP was investigated by optical transmission measurements from 2° to 300°K. The absorption edge in both materials is dominated by indirect optical transitions, and values of E g at 300°K are 2.45 eV for AlP and 2.16 eV for AlAs. The bandgaps at 0° are 2.52 eV and 2.238 eV respectively. The absorption edge structure in AlAs is consistent with the conduction band minima at or near X . It includes impurity-induced bound and free exciton components and phonon-assisted components. The corresponding phonon energies of 13( TA ), 27( LA ) 42( TO ) and 50 meV ( LO ) have been identified in AlAs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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