Picosecond Recombination of Photoexcited Carriers in Glow Discharge a-Si:H Films of Different Deposition Temperature

Autor:	V. Brückner, W. Nowick, D. Dietrich, H. Bergner
Rok vydání:	1983
Předmět:	Range (particle radiation) Glow discharge Chemistry Picosecond Analytical chemistry Relaxation (physics) Charge carrier Substrate (electronics) Condensed Matter Physics Recombination Electronic Optical and Magnetic Materials Amorphous solid
Zdroj:	physica status solidi (b). 120:655-658
ISSN:	0370-1972
DOI:	10.1002/pssb.2221200222
Popis:	The temporal behaviour is studied of photoexcited charge carriers in GD-a-Si: H in the ps range, the amorphous films are produced at different substrate temperatures up to 200°C. The recombination is characterized by a two-step relaxation process. The relaxation times are 32 to 165 ps and 0.75 to 1.4 ns, respectively. The sample prepared at 200°C shows a superposition of linear and bimolecular recombination. The recombination rate was found to be γ = 3,3 × 10−10 cm3 s−1.
Databáze:	OpenAIRE
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