A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

Autor:	Yangyuan Wang, Yue Pan, Ru Huang, Yimao Cai, Lijie Zhang, Yinglong Huang, Gengyu Yang
Rok vydání:	2012
Předmět:	Non-volatile memory Materials science business.industry Resistive switching Electrical engineering Microelectronics Maximum size Electrical and Electronic Engineering Crossbar array business Electronic Optical and Magnetic Materials Voltage Resistive random-access memory
Zdroj:	IEEE Transactions on Electron Devices. 59:2277-2280
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2012.2201158
Popis:	Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaOx/Pt RRAM device is proposed as the dynamic selector for the unipolar Pt/TaOx/Pt RRAM device to suppress the sneak current in the crossbar array. The testing results show that the bipolar RRAM can act as a good selector, and the sneak current is reduced by about two orders estimated by the 1/2 Vread voltage scheme. With the suppressed sneak current, the maximum size of the crossbar array with the bipolar RRAM selector can be increased to more than 1 Mb according to the simulation results, indicating that the bipolar RRAM selector has great potential for the high-density memory applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76266a2edf343f66524ebad3d6064e8d https://doi.org/10.1109/ted.2012.2201158 Zobrazit plný text záznamu