In-Line MOCVD of Aluminium Alloyed Zinc Sulfide: A Path to High Performance CdTe Solar Cells
| Autor: | Clayton, A.J., Oklobia, O., Siderfin, P.J., Jones, S., Kartopu, G., Teloeken, A.C., Lamb, D.A., Irvine, S.J.C. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| DOI: | 10.4229/35theupvsec20182018-3co.8.3 |
| Popis: | 35th European Photovoltaic Solar Energy Conference and Exhibition; 850-855 An aluminium alloyed zinc sulfide (Zn(Al)S) layer produced on NSG TECTM C10 substrates using inline metal organic chemical vapour deposition (MOCVD) was incorporated into thin film cadmium telluride (CdTe) devices as a high resistance transparent (HRT) layer. Inclusion of the Zn(Al)S improved the open circuit voltage (Voc) of the CdTe solar cells. The low electron affinity of the Zn(Al)S was shown by SCAPS to introduce a positive conduction band discontinuity, attributing to the enhanced Voc. This improvement was preserved as the cadmium zinc sulfide (Cd(Zn)S) buffer thickness was reduced. The Zn(Al)S was well adhered to the NSG TECTM C10 substrate and acted to prevent delamination of the device structure, previously observed, during more aggressive cadmium chloride (CdCl2) activation treatment (CHT), which occurred for devices without the HRT layer. Aggressive CHT parameters improved short circuit current-density for devices with 0.05 m thick Cd(Zn)S and 0.1 μm Zn(Al)S HRT layer, with some loss to Voc for the thinner Cd(Zn)S. Scanning electron microscopy revealed that grain enlargement increased after more aggressive CHT, reducing the grain boundary density where defect states typically reside. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|