Microstructure Evolution and Resistivity of Cu(B) Alloy Films on Ti Underlayer at the Early Stage of Annealing at 500 ℃
| Autor: | C. O. Jeong, Eun Gu Lee, Je-Hun Lee, Hyun Ruh, D. H. Kim, T. K. Hong, C. H. Kang, Seungmin Lee, D. M. Han, J. G. Lee |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Annealing (metallurgy) Metallurgy Alloy Metals and Alloys Analytical chemistry Lattice diffusion coefficient engineering.material Condensed Matter Physics Microstructure Grain size Grain growth Mechanics of Materials Electrical resistivity and conductivity Volume fraction Materials Chemistry engineering |
| Zdroj: | Metals and Materials International. 14:631-635 |
| ISSN: | 2005-4149 1598-9623 |
| DOI: | 10.3365/met.mat.2008.10.631 |
| Popis: | This study examined the time dependence of the microstructural evolution and resistivity of Cu(B) alloy thin films deposited on a Ti underlayer during rapid thermal annealing at 500°C. The growth of bimodal distributed grains began at approximately 20 s. The B that precipitated from the supersaturated solid solution dissolved and then out-diffused to the Ti underlayer. This led to a decrease in size (r) and volume fraction (f) of the B precipitates, which limited the growth of the small Cu grains (G a ) according to the Zener relationG a ∼rlf. The average size of the small grains and the volume fraction of B precipitates varied with time, according toG a ∼(time)0.67 and f∼(time)1.0, respectively. Therefore, the decrease in the size of B precipitates occurred according to the relation r∼(time)0.33, suggesting that the dissolution of B precipitates occurs through lattice diffusion. The resistivity ρ G varied with time according to ρ G ∼(time)0.65, in a similar manner to the time dependence of the Cu grain size, indicating that pinned grain growth is the main contributor to the resistivity of Cu(B) alloy films. |
| Databáze: | OpenAIRE |
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