Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers
| Autor: | N. I. Kargin, I. S. Vasil’evskii, M.N. Strikhanov, V. P. Gladkov, A. N. Vinichenko |
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| Rok vydání: | 2014 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics Quantum point contact Doping technology industry and agriculture Induced high electron mobility transistor Physics::Optics Heterojunction High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum state Quantum well |
| Zdroj: | Semiconductors. 48:1619-1625 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782614120227 |
| Popis: | The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobility in the quantum well by suppressing the tunnel coupling with the donor region through the introduction of an AlAs nanobarrier into the spacer layer is proposed. It is experimentally shown that, in the samples with a shallow quantum well, the AlAs nanobarrier introduced into the spacer layer provides a larger than threefold increase in the electron mobility at low temperatures. |
| Databáze: | OpenAIRE |
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