Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit

Autor:	Mercouri G. Kanatzidis, Ctirad Uher, Timothy P. Hogan, Wei Chen, Fu Guo, Jeffrey S. Dyck, Kuei Fang Hsu, Efstathios K. Polychroniadis, Sim Loo
Rok vydání:	2004
Předmět:	Thermoelectric generator Semiconductor Chemistry business.industry Thermoelectric effect Doping Figure of merit Energy transformation General Medicine Atmospheric temperature range Thermoelectric materials business Engineering physics
Zdroj:	ChemInform. 35
ISSN:	1522-2667 0931-7597
Popis:	The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPb m SbTe 2+ m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n -type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZT max of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPb m SbTe 2+ m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7614e3d42fa44b44d571aa812dafa552 https://doi.org/10.1002/chin.200417240 Zobrazit plný text záznamu Plný text