Chip Package Interaction for 65nm CMOS Technology with C4 Interconnections

Autor:	Conal E. Murray, Ian D. Melville, Matthew Angyal, Xiao Hu Liu, Jennifer V. Muncy, Vincent J. McGahay, Henry A. Nye, Charles F. Carey, Mukta G. Farooq, M. Cullinan-Scholl, Robert Hannon, Michael Lane, David L. Questad, T. Shaw, Wolfgang Sauter, Christopher D. Muzzy, P.V. McLaughlin
Rok vydání:	2007
Předmět:	Stress (mechanics) Cmos chip Reliability (semiconductor) Materials science CMOS Chip-scale package Electronic engineering Chip Flip chip Life testing
Zdroj:	2007 IEEE International Interconnect Technology Conferencee.
Popis:	This paper discusses the chip package interaction (CPI) for a 65 nm low k BEOL CMOS chip assembled to an organic package. Inter-level dielectrics with k~3.0 and k~2.7, with oxide terminations, were used in combination with both Sn/Pb and lead-free C4s. Various underfill compounds were tested to determine their effectiveness in mitigating chip stresses without significantly impairing C4 fatigue life. A summary of the reliability stress results will be presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::76104b2dd2c55ee5af5756348ca68025 https://doi.org/10.1109/iitc.2007.382388 Zobrazit plný text záznamu