Current Status of Fram Development and Future Direction
| Autor: | Sung-Yung Lee, Kinam Kim |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Optimal design
Random access memory Hardware_MEMORYSTRUCTURES Materials science business.industry Electrical engineering High density Condensed Matter Physics Electronic Optical and Magnetic Materials Cell size law.invention Capacitor Reliability (semiconductor) Recording density law Current (fluid) business |
| Zdroj: | Ferroelectrics. 267:245-254 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/00150190211025 |
| Popis: | Current and future FRAM technologies are reviewed and discussed for developing high density FRAM devices as stand-alone memory application. In order to enter into mainstream of memory devices, FRAM devices should achieve such small cell size factor of ∼8F 2 , strong reliability, and design optimization. The low cell size factor can be realized by using etchless capacitor technology, ultra thin capacitor technology, and runner via technology. The reliability can be acquired by Pt-inserting technology. Finally, high density FRAM device can be accomplished by design optimization. |
| Databáze: | OpenAIRE |
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