Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
| Autor: | Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo |
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| Rok vydání: | 1999 |
| Předmět: |
Magnesium
Doping Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Alloy composition Oxygen Electronic Optical and Magnetic Materials Oxygen atom chemistry Materials Chemistry Metalorganic vapour phase epitaxy P type doping Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 28:916-925 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0220-x |
| Popis: | Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors. |
| Databáze: | OpenAIRE |
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