Transfer of patterned ion-cut silicon layers

Autor:	P. M. Asbeck, C. H. Yun, A. B. Wengrow, K. V. Smith, Y. Zheng, R. J. Welty, Z. F. Guan, Nathan W. Cheung, S. S. Lau, Edward T. Yu
Rok vydání:	1998
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Wafer bonding Hybrid silicon laser Analytical chemistry chemistry.chemical_element Photoresist Wafer backgrinding Ion implantation chemistry Etching (microfabrication) Optoelectronics Wafer business
Zdroj:	Applied Physics Letters. 73:2772-2774
ISSN:	1077-3118 0003-6951
Popis:	The technique of transferring patterned ion-cut layers from one Si wafer to another was demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3 μm thick polymethylmethacrylate/photoresist and was implanted with 5×1016 H+ ions/cm2 at 150 keV. After stripping off the mask, the wafer was bonded to an oxide-coated receptor wafer through low-temperature direct wafer bonding. Heat treatment of this bonded pair showed that the hydrogen-induced silicon surface layer cleavage (ion cut) could propagate throughout about 16 μm×16 μm of nonimplanted material with implanted regions only 4 μm wide. Mask width, spacing, and implantation profiles through the mask shape were shown to have effects on the internal microfracturing mechanisms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::760566c8f6150f1f64e75078c345e2f5 https://doi.org/10.1063/1.122586 Zobrazit plný text záznamu