Significant hopping conduction and oxygen diffusion in implanted YSZ at low temperatures of 100?250 �C

Autor:	Ilan Riess, R. Kalish, Joachim Maier, S. Raz, N. Stelzer
Rok vydání:	2004
Předmět:	Materials science Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Ionic bonding General Chemistry Conductivity Condensed Matter Physics Thermal conduction Oxygen Conductor Ion implantation chemistry General Materials Science Yttria-stabilized zirconia
Zdroj:	Solid State Ionics. 175:323-327
ISSN:	0167-2738
DOI:	10.1016/j.ssi.2004.03.035
Popis:	The surface of Y2O3-stabilized ZrO2 (YSZ) is implanted with Cu and Mn in order to turn it into a mixed ionic electronic conductor (MIEC). Ar is implanted in order to examine the effect of damage only on the electrical properties. Mixed conductivity appears in the Cu- and Mn-implanted layers and is high enough to short-circuit the much thicker non-implanted YSZ layer, at T A relatively fast exchange of oxygen with YSZ is observed at temperatures as low as 215 °C through the implanted layer, where equilibrium is obtained, upon annealing, within ∼60 min.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7603c8d32f6054b1737ff67c358db61c https://doi.org/10.1016/j.ssi.2004.03.035 Zobrazit plný text záznamu Full Text from ScienceDirect