Zero-Process-Change SiGe Heterojunction Avalanche Photodiode for High-Speed, High-Gain Detection Near the Silicon Band Edge
| Autor: | Patrick S. Goley, John D. Cressler, Edward Preisler |
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| Rok vydání: | 2021 |
| Předmět: |
Photocurrent
Electron mobility Materials science business.industry Heterojunction Avalanche photodiode Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound Responsivity chemistry Fall time Parasitic element Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 42:1260-1263 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | A novel design for a silicon-integrated avalanche photodiode (APD) capable of high internal gain (>16,000) is presented. The APD was fabricated in an unmodified, commercial high-volume, high-performance (300 GHz ${f}_{T}/{f}_{\text {MAX}}$ ) silicon-germanium (SiGe) BiCMOS technology. The APD’s high gain is partially attributed to the enhanced lateral carrier mobility of its strained SiGe anode, and the low sheet resistance of its cathode contact. These design aspects lower parasitic resistance and improve junction electric field uniformity, increasing maximum gain. For applications not requiring maximum device speed, a time-resolved overall responsivity of 4.2 A/W is demonstrated, with a photocurrent pulse fall time (90%/10%) of 46 ns at 1066 nm. Alternatively, for applications requiring faster speed, the device can be biased to 0.16 A/W with a fall time of 2.5 ns, or 0.07 A/W with a fall time of 0.8 ns. |
| Databáze: | OpenAIRE |
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