A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors
| Autor: | D. Rigaud, D. Sodini |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
Engineering
Mobility model Condensed matter physics business.industry Numerical analysis Isotropy Field dependence Condensed Matter Physics Electronic Optical and Magnetic Materials Computer Science::Emerging Technologies Electric field Materials Chemistry Electronic engineering Field-effect transistor Electrical and Electronic Engineering business Saturation (magnetic) |
| Zdroj: | Solid-State Electronics. 24:635-642 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(81)90192-1 |
| Popis: | A field dependent mobility model for use in quasi-unidimensional numerical analysis of JG FET is proposed. This model takes into account the electrical data (mobility and diffusion laws vs electric field) obtained on Si bulk material, the technological data given by the manufacturer (geometry of the mask) and the assumption of an isotropic diffusion of the gates. The static and the dynamic behaviour of the JG FET is obtained. The validity of the present model is demonstrated using very different geometrical JG FET structures. Reasonable agreement is found between calculated and experimental results up to the saturation range. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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