Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
| Autor: | Pranoy Deb Shuvra, Michael W. McCurdy, Huiqi Gong, Wenjun Liao, Andrew L. Sternberg, Bruce W. Alphenaar, Jimmy L. Davidson, Kevin M. Walsh, Michael L. Alles, Robert A. Reed, Daniel M. Fleetwood, En Xia Zhang, Ronald D. Schrimpf, Ji-Tzuoh Lin, Shamus McNamara |
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| Rok vydání: | 2017 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Cantilever Hydrogen Silicon 010308 nuclear & particles physics Annealing (metallurgy) chemistry.chemical_element Young's modulus 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Piezoresistive effect Acceptor symbols.namesake Nuclear Energy and Engineering chemistry 0103 physical sciences symbols Electronic engineering Irradiation Electrical and Electronic Engineering Composite material 0210 nano-technology |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:263-268 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing. An explanation of the results is proposed that is based on radiation-induced acceptor depassivation. This occurs because radiation-generated holes release hydrogen from previously passivated acceptors, causing the carrier concentration to increase, especially near the surface. Increased carrier concentration decreases Young’s modulus, resulting in a decrease in the cantilever resonant frequency. Finite element simulations show that the effect of a decreasing Young’s modulus in the surface region is consistent with the measured decrease in resonant frequency in the irradiated devices. |
| Databáze: | OpenAIRE |
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