Low temperature electrical measurements of silicon bipolar monolithic microwave integrated circuit (MMIC) amplifiers
| Autor: | Michael Pecht, Mohammadreza Keimasi, Sanka Ganesan |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Engineering
business.industry Amplifier Electrical engineering Gain compression Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Temperature measurement Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hardware_INTEGRATEDCIRCUITS Scattering parameters Electrical measurements Electrical and Electronic Engineering Safety Risk Reliability and Quality business Telecommunications equipment Monolithic microwave integrated circuit Microwave |
| Zdroj: | Microelectronics Reliability. 46:326-334 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2005.07.002 |
| Popis: | Outdoor telecommunications equipment can be exposed to ambient temperatures as low as −55 °C. However, microwave devices used in telecommunications infrastructure equipment are generally not rated to such low temperature. This paper assesses scattering parameters (S-parameters), the output power at 1 dB gain compression, and DC characteristics of a silicon bipolar monolithic microwave integrated circuit (MMIC) amplifier at low temperatures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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