Synthesis of GaPO4-GaN Coaxial Nanowires
| Autor: | Lu-Tang Fu, Zhigang Chen, Hongtao Cong |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Polymers and Plastics Mechanical Engineering Metals and Alloys Nanowire Nanotechnology Heterojunction Chemical vapor deposition Microstructure Crystal Chemical engineering Mechanics of Materials Transmission electron microscopy Materials Chemistry Ceramics and Composites Nanorod Coaxial |
| Zdroj: | Journal of Materials Science & Technology. 26:15-19 |
| ISSN: | 1005-0302 |
| DOI: | 10.1016/s1005-0302(10)60002-3 |
| Popis: | GaPO(4)-GaN coaxial nanowires were synthesized by two-step chemical vapor deposition method using H(2) and NH(3) as reactant gas in turn at 950 degrees C. The morphology and microstructures of the GaPO(4)-GaN coaxial nanowires were studied by scanning elctron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The nanowires have an average diameter of similar to 15 nm and length of hundreds of nanometers. The core is GaPO(4) crystal and the outer shell is GaN crystal. The formation mechanism was discussed and the key factors controlling the growth are temperature and the concentration of reactant gases. These coaxial nanowires may have potential application for piezoluminescence nano-devices, and the two-step synthetic technique could be used to grow rationally other 1D GaN-based nanowire heterostructures. |
| Databáze: | OpenAIRE |
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