Manufacturing Quality Control Systems of Power Semiconductor Devices and Informative Parameters of Their Reliability
| Autor: | V. A. Kobozev, V. N. Shemyakin, A. V. Efanov, A. B. Ershov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Automatic control
Computer science 020209 energy Process (computing) 02 engineering and technology Semiconductor device Power (physics) Reliability engineering Reliability (semiconductor) Control system 0202 electrical engineering electronic engineering information engineering Power semiconductor device Electrical and Electronic Engineering Voltage |
| Zdroj: | Russian Electrical Engineering. 90:212-215 |
| ISSN: | 1934-8010 1068-3712 |
| DOI: | 10.3103/s1068371219030076 |
| Popis: | Problems of ensuring the reliability of power semiconductor devices at the initial section (1000—3000 h) of their long-term operation were considered. The necessity of application the number of failures during failure in time (FIT) as reliability parameters was substantiated. It was shown that the stability of the reverse current of the power key under the influence of the highly stable reverse voltage is one of the parameters determining the physical reliability of power devices. The installation of an automatic control system of power semiconductor devices for the stability of their electrical parameters was presented as an element of the practical implementation of the test process of finished products and detection of potentially unreliable samples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink