A band-switchable CMOS low noise amplifier using switching inductors
| Autor: | Shih-Chih Chen, Cheng-Lin Huang, Ruey-Lue Wang |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
business.industry Amplifier Electrical engineering LC circuit Condensed Matter Physics Inductor Noise (electronics) Low-noise amplifier Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Multi-band device Electrical and Electronic Engineering business Microwave Voltage |
| Zdroj: | Microwave and Optical Technology Letters. 53:462-467 |
| ISSN: | 0895-2477 |
| DOI: | 10.1002/mop.25707 |
| Popis: | In this article, a band-switchable low noise amplifier using switching inductors is designed and measured. A voltage supply is fed through the structure of switching inductors. The switching inductors consist of three inductors in series and two PMOSFET switches, which are individually connected in parallel with one of the two inductors near the voltage supply. According to on or off states of two PMOSFET switches, there are four operation modes that generate a single-band, two dual-band, and a triple-band transfer characteristics, respectively. The presented circuit is a modified cascoded amplifier configuration in which input stage is a common-gate structure. The measured gains are nearly >11 dB at all operation frequency bands. The measured reflection coefficients are almost |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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