Decoupled tunneling and GIDL effects for 28nm high-k stacked nMOSFETs
| Autor: | Mu-Chun Wang, Shea-Jue Wang, Jin-Wei Guo, Shuang-Yuan Chen, Heng-Sheng Huang, Ko-Chin Hsu |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Dielectric 01 natural sciences Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics business Decoupling (electronics) Quantum tunnelling High-κ dielectric |
| Zdroj: | 2017 6th International Symposium on Next Generation Electronics (ISNE). |
| DOI: | 10.1109/isne.2017.7968706 |
| Popis: | One interesting result for 28nm high-k stacked n-channel MOSFET with W/L= 0.5/0.12 (μm/μm) electrically sensed demonstrates the tunneling and GIDL effects which can effectively be decoupled by gate bias at accumulation mode. Due to the drain bias assisted, the decoupling performance in this work is more apparent. In the low gate bias, the GIDL effect is clearer; reversely, the tunneling effect is dominant at the high gate bias. |
| Databáze: | OpenAIRE |
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