New donor doping sources for molecular beam epitaxy of AlGaSb and AlGaAs
| Autor: | Z. R. Zytkiewicz, L. Dobaczewski, Mohamed Missous, K.E. Singer |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Free electron model
High concentration Range (particle radiation) Materials science Mechanical Engineering Alloy Inorganic chemistry Doping Analytical chemistry Crystal growth engineering.material Condensed Matter Physics N type conductivity Mechanics of Materials engineering General Materials Science Molecular beam epitaxy |
| Zdroj: | Materials Science and Technology. 12:193-196 |
| ISSN: | 1743-2847 0267-0836 |
| DOI: | 10.1179/mst.1996.12.2.193 |
| Popis: | Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1−xSb (0≤x≤1) and AlxGa1−x As (0≤x≤0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 1018 cm −3. For AxGa1−xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In AxGa1−xSb donor related defects (DX centres) were observed.MST/3331 |
| Databáze: | OpenAIRE |
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