Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source
| Autor: | Sang Dae Choi, Kyoung-Joon An, Min-Jun Choi, Ju-Yeoul Baek, Kwun-Bum Chung, O Dae Kwon |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials Science (miscellaneous) Analytical chemistry 02 engineering and technology General Medicine Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Plasma-enhanced chemical vapor deposition Sputtering 0103 physical sciences Surface roughness Deposition (phase transition) Radio frequency Electrical and Electronic Engineering Physical and Theoretical Chemistry 0210 nano-technology Refractive index Layer (electronics) |
| Zdroj: | Applied Science and Convergence Technology. 25:73-76 |
| ISSN: | 2288-6559 |
| DOI: | 10.5757/asct.2016.25.4.73 |
| Popis: | Multi-layer films of SiN x /SiO x /InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of SiN x /SiO x /InSnO was investigated as a function of ratio of SiN x and SiO x thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system. |
| Databáze: | OpenAIRE |
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