Autor: A. A. Glebkin, V. A. Chapnin, T. S. Kitichenko, A. P. Korovin, T. G. Kolesnikova
Rok vydání: 2001
Předmět:
Zdroj: Russian Microelectronics. 30:111-117
ISSN: 1063-7397
DOI: 10.1023/a:1009485911843
Popis: The parameters of deep traps in ZnCdTe(Cl) solid solutions were found with the method of thermally stimulated capacitor discharge (TCD). It was shown that the vapor-grown single crystals have a rather low concentration of deep traps, which influence nonequilibrium-carrier transfer. It seems that vapor-grown single-crystal quasi-binary ZnCdTe compounds are candidates for high-temperature ionizing-radiation detectors. From our results, it also follows that the TCD current method is helpful in investigating and selecting a detector-grade material.
Databáze: OpenAIRE