Autor: | A. A. Glebkin, V. A. Chapnin, T. S. Kitichenko, A. P. Korovin, T. G. Kolesnikova |
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Rok vydání: | 2001 |
Předmět: | |
Zdroj: | Russian Microelectronics. 30:111-117 |
ISSN: | 1063-7397 |
DOI: | 10.1023/a:1009485911843 |
Popis: | The parameters of deep traps in ZnCdTe(Cl) solid solutions were found with the method of thermally stimulated capacitor discharge (TCD). It was shown that the vapor-grown single crystals have a rather low concentration of deep traps, which influence nonequilibrium-carrier transfer. It seems that vapor-grown single-crystal quasi-binary ZnCdTe compounds are candidates for high-temperature ionizing-radiation detectors. From our results, it also follows that the TCD current method is helpful in investigating and selecting a detector-grade material. |
Databáze: | OpenAIRE |
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