Resistivity and hall effect of reactively zirconium nitride films

Autor:	M. Saib, J.C. Francois, P. Gravier, M. Sigrist, O. Cerclier, L. Argeme
Rok vydání:	1986
Předmět:	Chemistry Analytical chemistry Mineralogy General Chemistry Zirconium nitride Partial pressure Nitride Condensed Matter Physics chemistry.chemical_compound Electrical resistivity and conductivity Sputtering Hall effect X-ray crystallography Materials Chemistry Thin film
Zdroj:	Solid State Communications. 58:385-388
ISSN:	0038-1098
DOI:	10.1016/0038-1098(86)90810-0
Popis:	The d.c. electrical resistivity ϱ and Hall constant RH of ZrNx films, deposited in a reactive sputtering system, were measured as a function of n nitrogen partial pressure P(N2). Film structure was also examined by X-ray diffraction. ϱ showed a disconuity at a nitrogen partial pressure Pc and presented a minimum value, for presumably the composition nearest to the stoichiometry. RH was positive for P Pc.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::75891109a10944b03f6922c32fbdc3f7 https://doi.org/10.1016/0038-1098(86)90810-0 Zobrazit plný text záznamu