A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detection
| Autor: | Junhee Moon, Seung-Hwan Kim, Sheng S. Li, Jung Hee Lee |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Physics
business.industry Infrared Photodetector Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Responsivity Optics Stack (abstract data type) Optoelectronics business Quantum well infrared photodetector Quantum well Dark current |
| Zdroj: | Infrared Physics & Technology. 44:235-241 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/s1350-4495(02)00227-x |
| Popis: | In this paper we report a high performance two-stack, multi-color quantum well infrared photodetector (QWIP) composed of an InGaAs/AlGaAs QWIP and an InGaAs/AlGaAs/InGaAs triple-coupled (TC-) QWIP grown on the GaAs substrate for mid- and long-wavelength (MW/LW) infrared (IR) detection. The basic device structure consists of a MWIR QWIP stack with 3 periods of a 43 A In0.3Ga0.7As quantum well and an undoped 300 A Al0.3Ga0.7As barrier and of a LWIR TC-QWIP stack with 5 periods of a 65 A In0.18Ga0.82As quantum well (QW) and two undoped 60 A In0.05Ga0.95As QWs separated by 20 A Al0.08Ga0.92As barriers. The TC-QWIP stack has two response peaks, which are voltage-tunable from 9.2 to 10 μm and 12 to 12.2 μm by the applied bias, respectively. For the LWIR TC-QWIP, a maximum responsivity of 1.96 A/W at 12 μm was obtained at T=40 K, and a maximum detectivity of D*=1.59×1010 cm Hz1/2/W was estimated at Vb=−1.7 V, λp=12 μm, and T=20 K. As for the MWIR QWIP stack a responsivity value greater than 0.3 A/W at λp=5.1 μm was obtained at 120 K, which was found to be nearly independent of the applied bias and temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect