Thermal degradation of TiSi2/poly-Si gate electrodes
| Autor: | C. S. Petersson, R. Buchta, S. Nygren, C. Chatfield, Mikael Östling, K.-H. Rydén, Hans Norström |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Materials science
Dielectric strength Silicon Precipitation (chemistry) business.industry technology industry and agriculture Metals and Alloys chemistry.chemical_element Surfaces and Interfaces engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Polycrystalline silicon chemistry Gate oxide Transmission electron microscopy Silicide Materials Chemistry engineering Optoelectronics Polycide business |
| Zdroj: | Thin Solid Films. 168:325-334 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(89)90016-3 |
| Popis: | The influence of high temperature processing steps on the integrity of a polycide metal-oxide-semiconductor system has been investigated. At temperatures exceeding 900°C the TiSi 2 /poly-Si (where poly-Si is polycrystalline silicon) system is not stable, and the dielectric strength of an underlaying gate oxide deteriorates. Degradation of the silicide-poly-Si interface was detected by backscattering spectrometry. Scanning and transmission electron microscopy revealed silicon precipitation and silicide film deformation. |
| Databáze: | OpenAIRE |
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