Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
| Autor: | M. Stadele, W. Rosner, M. Kittler, Ralf Granzner, Frank Schwierz, V. M. Polyakov, Richard Johannes Luyken |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Monte Carlo method Ranging Mechanics Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computer Science::Hardware Architecture Computer Science::Emerging Technologies MOSFET Dynamic Monte Carlo method Range (statistics) Waveform Direct simulation Monte Carlo Electrical and Electronic Engineering Diffusion (business) |
| Zdroj: | Microelectronic Engineering. 83:241-246 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2005.08.003 |
| Popis: | The dc behavior of single-gate and double-gate MOSFETs with gate lengths ranging from 5 to 100nm is simulated using drift-diffusion, hydrodynamic, and Monte Carlo approaches. It is shown that by simple adjustments of the drift-diffusion and hydrodynamic transport model parameters the Monte Carlo currents can be reproduced in the entire gate length range. The suitability of the different simulation methods for the simulation of nanometer MOSFETs is briefly discussed. |
| Databáze: | OpenAIRE |
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