Simulation of the polymerization process on a silicon surface under plasma-chemical etching in CF4/H2

Autor:	A. G. Gorobchuk, Yu. N. Grigoryev
Rok vydání:	2015
Předmět:	Silicon Passivation Chemistry Inorganic chemistry chemistry.chemical_element Hydrogen fluoride Isotropic etching Surfaces Coatings and Films chemistry.chemical_compound Adsorption Chemical engineering Etching (microfabrication) Fluorine Reactive-ion etching
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:184-189
ISSN:	1819-7094 1027-4510
Popis:	The hydrodynamic approach is used to simulate silicon passivation by unsaturated CFx radicals under plasma-chemical etching in CF4/H2. The plasma-chemical kinetics model contains 28 determinative gas-phase reactions with the participation of F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, and CH2F2. The extended kinetics of heterogeneous reactions on a silicon surface comprises the competing processes of the adsorption of CF2 and CF3 radicals. It is demonstrated that a major portion of atomic fluorine is actively involved in the formation of hydrogen fluoride, reducing the silicon etching rate to a significant extent. It is established that CF2 adsorption is predominant among the competing processes of the passivation of a silicon surface and that the CF2 layer covers the entire silicon surface at a 40% H2 content, thereby causing its etching to cease.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::756813c0ec4c121a11264fe7ad65541c https://doi.org/10.1134/s1027451015010309 Zobrazit plný text záznamu Full text from SpringerLink