Specific Features of the Luminescence of ZnO:Te/GaN/Al2O3 Heterostructures
| Autor: | A. Sh. Asvarov, A. M. Bagamadova, A. K. Omaev, M. E. Zobov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Diffraction Materials science Photoluminescence Physics and Astronomy (miscellaneous) Hydrogen business.industry Continuous flow chemistry.chemical_element Heterojunction Zinc Epitaxy 01 natural sciences 010305 fluids & plasmas chemistry 0103 physical sciences Optoelectronics Luminescence business |
| Zdroj: | Technical Physics Letters. 44:1142-1144 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785018120398 |
| Popis: | High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al2O3 heterostructure have been analyzed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|