Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures
Autor: | H. Mertens, R. Ritzenthaler, Y. Oniki, P. Puttarame Gowda, G. Mannaert, F. Sebaai, A. Hikavyy, E. Rosseel, E. Dupuy, A. Peter, K. Vandersmissen, D. Radisic, B. Briggs, D. Batuk, J. Geypen, G. Martinez-Alanis, F. Seidel, O. Richard, B.T. Chan, J. Mitard, E. Dentoni Litta, N. Horiguchi |
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Rok vydání: | 2022 |
Zdroj: | 2022 International Electron Devices Meeting (IEDM). |
Databáze: | OpenAIRE |
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