Graphite thin film formation by chemical vapor deposition

Autor: Masako Yudasaka, Rie Kikuchi, Etsuro Ota, Hiroaki Kamo, T. Matsui, Yoshimasa Ohki, Susumu Yoshimura
Rok vydání: 1994
Předmět:
Zdroj: Applied Physics Letters. 64:842-844
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.110998
Popis: Well‐ordered graphite thin films were obtained by chemical vapor deposition of 2‐methyl‐ 1,2’‐naphthyl ketone on Ni substrates at substrate temperatures higher than 600 °C. Values of interlayer spacing calculated from x‐ray diffraction data were between 3.360 and 3.350 A. Raman scattering spectra of the films showed a peak centering at 1580 cm−1.
Databáze: OpenAIRE