High Performance 3.3KV 4H-SiC MOSFET with a Floating Island and Hetero Junction Diode

Autor: Jaeyeop Na, Kwansoo Kim
Rok vydání: 2023
Zdroj: 2023 International Conference on Electronics, Information, and Communication (ICEIC).
DOI: 10.1109/iceic57457.2023.10049864
Databáze: OpenAIRE