Cu(In,Ga)Se2 solar cells, numerical simulation and analysis
| Autor: | Sabrina Benabbas, Hocine Heriche, Zahir Rouabah |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Computer Networks and Communications business.industry 020209 energy Photovoltaic system 02 engineering and technology Development 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells Capacitance Computer Science Applications law.invention Operating temperature law Solar cell 0202 electrical engineering electronic engineering information engineering Electronic engineering Optoelectronics Thin film 0210 nano-technology business Current density Civil and Structural Engineering Voltage |
| Zdroj: | African Journal of Science, Technology, Innovation and Development. 8:327-330 |
| ISSN: | 2042-1346 2042-1338 |
| DOI: | 10.1080/20421338.2015.1118867 |
| Popis: | In this work, we have used a one-dimensional simulation program called the solar cell capacitance simulator (SCAPS) to design solar cells with the structure SnOx/CdS/CIGS (SnOx window, CdS buffer and CIGS absorber material) and study their performance. To improve efficiency we have used a grading layer of CIGS but with different band-gaps. Cu(In,Ga) Se2 has grading band-gaps varying in range from 1.04 to 1.68 eV, with the corresponding Ga content x = 0 to 1. The grading layer used improves the open-circuit voltage (VOC) and also the short-circuit current density (JSC). Photovoltaic parameters were determined using the current density-voltage (J-V) curve. In addition, we have studied the effects of operating temperature on grading layer CIGS solar cells. Our numerical simulation gives some important indications to lead to higher efficiency of CIGS solar cells. |
| Databáze: | OpenAIRE |
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