| Autor: |
M. Badylevich, S. Van Elshocht, Ch. Walczyk, Valery V. Afanas'ev, M. Lukosius, Wan-Chih Wang, Andre Stesmans, Ch. Wenger, Jorge A. Kittl, C. Adelmann |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
IOP Conference Series: Materials Science and Engineering. 8:012028 |
| ISSN: |
1757-899X |
| DOI: |
10.1088/1757-899x/8/1/012028 |
| Popis: |
We have investigated yttrium oxide (Y2O3) as a charge trapping layer for nonvolatile memory cells. The Y2O3 films of 7 to 55 nm thick were deposited by atomic vapour deposition on (100)Si with a 2 or 5−nm thick pregrown thermal SiO2 serving as a tunnel dielectric. Analyses of these structures using spectroscopic ellipsometry, photoconductivity and internal photoemission reveal that Y2O3 has a 5.6−eV wide optical bandgap and a conduction band offset of 2.0 eV with respect to silicon. Upon electron tunneling, an efficient oxide charging was observed. Photo-(dis)charging experiments reveal that the optical energy depth of most of the electron traps exceeds 2 eV with respect to the Y2O3 conduction band. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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