A hydrogen‐sensitive Pd‐gate MOS transistor
| Autor: | K.I. Lundstrom, Christer Svensson, M.S. Shivaraman |
|---|---|
| Rok vydání: | 1975 |
| Předmět: |
Materials science
Argon Hydrogen Physics::Instrumentation and Detectors Transistor Analytical chemistry General Physics and Astronomy chemistry.chemical_element Partial pressure Nitrogen law.invention Threshold voltage Computer Science::Emerging Technologies chemistry law Physics::Chemical Physics Sensitivity (electronics) Palladium |
| Zdroj: | Journal of Applied Physics. 46:3876-3881 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.322185 |
| Popis: | An n‐channel MOS transistor with palladium gate was fabricated. The threshold voltage of this transistor was found to depend on the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C, 10 ppm hydrogen in air is easily detected, and in nitrogen or argon the sensitivity is considerably larger. A model, based on hydrogen adsorption on the palladium–silicon dioxide interface, is proposed. This model explains the device behavior and is also able to predict the absolute sensitivity for hydrogen in argon. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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