Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide
| Autor: | Shodai Takayoshi, Manato Deki, Takuro Tomita, Takahiro Makino, Takeshi Ohshima, Yoshiki Naoi, Tomoki Oka |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Mechanical Engineering Analytical chemistry Trapping Condensed Matter Physics Laser Molecular physics law.invention chemistry.chemical_compound chemistry Mechanics of Materials Electrical resistivity and conductivity law Impurity Femtosecond Silicon carbide General Materials Science Irradiation Ohmic contact |
| Zdroj: | Materials Science Forum. :661-664 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.778-780.661 |
| Popis: | Temperature dependence of the femtosecond laser modified region on silicon carbide was measured. The current-voltage characteristics showed the ohmic properties and thus we could evaluate the specific resistance for each irradiation conditions and the measured temperatures. The specific resistance was increased with decreasing temperature. From the double exponential fit to the temperature dependence of the specific resistance, the trapping energy of the impurity levels formed by the femtosecond laser modification was found to be 4.5 meV and 51.4 meV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|